Nonvolatile electric control of exciton complex in monolayer MoSe$_2$ with two dimensional ferroelectric CuInP$_2$S$_6$

Monolayer transition metal dichalcogenides (TMDs) have provided a platform to investigate the excitonic states at the two-dimensional (2D) limit. The inherent properties of excitons in TMDs such as the quantum yield, the charge states and even the binding energy, can be effectively controlled via the electrostatic gating, the selective carrier doping or the substrate dielectric engineering. Here, aiming for the nonvolatile electrical tunability of excitonic states and thereby the optical property of TMDs, we demonstrate a 2D ferroelectric heterostructure with monolayer MoSe$_2$ and ultrathin CuInP$_2$S$_6$ (CIPS). In the heterostructure, the electric polarization of CIPS results in continuous, global, and giant electronic modulation in monolayer MoSe$_2$. With the saturated ferroelectric polarization of CIPS, electron-doped or hole-doped MoSe$_2$ is realized in a single device with a large carrier density tunability up to $5\times 10^{12}$cm$^{-2}$. The nonvolatile behavior of these devices up to three months is also characterized. Our results provide a new and practical strategy for low-power consumption and agelong tunable optoelectronic devices.

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