Search Results for author: Heng Liu

Found 6 papers, 4 papers with code

EVF-SAM: Early Vision-Language Fusion for Text-Prompted Segment Anything Model

1 code implementation28 Jun 2024 Yuxuan Zhang, Tianheng Cheng, Rui Hu, Lei Liu, Heng Liu, Longjin Ran, Xiaoxin Chen, Wenyu Liu, Xinggang Wang

Surprisingly, we observe that: (1) multimodal prompts and (2) vision-language models with early fusion (e. g., BEIT-3) are beneficial for prompting SAM for accurate referring segmentation.

Interactive Segmentation Language Modelling +3

AI Generated Signal for Wireless Sensing

no code implementations22 Dec 2023 Hanxiang He, Han Hu, Xintao Huan, Heng Liu, Jianping An, Shiwen Mao

Deep learning has significantly advanced wireless sensing technology by leveraging substantial amounts of high-quality training data.

Attribute Denoising +1

A Survey on Temporal Knowledge Graph Completion: Taxonomy, Progress, and Prospects

1 code implementation4 Aug 2023 Jiapu Wang, Boyue Wang, Meikang Qiu, Shirui Pan, Bo Xiong, Heng Liu, Linhao Luo, Tengfei Liu, Yongli Hu, BaoCai Yin, Wen Gao

Temporal characteristics are prominently evident in a substantial volume of knowledge, which underscores the pivotal role of Temporal Knowledge Graphs (TKGs) in both academia and industry.

Missing Elements Temporal Knowledge Graph Completion

Perception Consistency Ultrasound Image Super-resolution via Self-supervised CycleGAN

1 code implementation28 Dec 2020 Heng Liu, Jianyong Liu, Tao Tao, Shudong Hou, Jungong Han

Due to the limitations of sensors, the transmission medium and the intrinsic properties of ultrasound, the quality of ultrasound imaging is always not ideal, especially its low spatial resolution.

Generative Adversarial Network Image Enhancement +2

Nonvolatile electric control of exciton complex in monolayer MoSe$_2$ with two dimensional ferroelectric CuInP$_2$S$_6$

no code implementations10 Nov 2020 Xiaoyu Mao, Jun Fu, Chen Chen, Yue Li, Heng Liu, Ming Gong, Hualing Zeng

With the saturated ferroelectric polarization of CIPS, electron-doped or hole-doped MoSe$_2$ is realized in a single device with a large carrier density tunability up to $5\times 10^{12}$cm$^{-2}$.

Materials Science

Cannot find the paper you are looking for? You can Submit a new open access paper.