no code implementations • 10 Nov 2020 • Xiaoyu Mao, Jun Fu, Chen Chen, Yue Li, Heng Liu, Ming Gong, Hualing Zeng
With the saturated ferroelectric polarization of CIPS, electron-doped or hole-doped MoSe$_2$ is realized in a single device with a large carrier density tunability up to $5\times 10^{12}$cm$^{-2}$.
Materials Science
