Numerical study of solar cells based on ZnSnN2 structure

Based on several semiconductor research, we have studied one of the new semiconductors, due to its exciting physical proprieties that in turn solve some problems in the photovoltaic’s industry. We have divided this work into two parts. The first part, is to study the optical proprieties of ZnSnN2, as calculation of the absorption coefficient, bandgap, reflection coefficient, and transmission coefficient. As for the second part, a study of some parameters that affect the efficiency of p-CuCrO2 (CCO)/ n-ZnSnN2 (ZTN) solar cell using SCAPS-1D software, and our results are compared with the results of another software (wxAMPS), where results showed great compatibility with the presence of weak uncertainty. We have studied the influence of many parameters such as the thickness of the absorber layer (n-ZnSnN2), the thickness of the buffer layer (p-CuCrO2), the temperature, the series resistance (Rs), the shunt resistance (Rsh) and the defect density on the performance of ZnSnN2 solar cells which included in the real device. The photovoltaic parameters have been calculated using AM1.5G solar irradiance at the intensity of one sun, a temperature of 300 K, and considering the flat band condition at the interface. We have been achieving a high-efficiency of η ≈ 22% without defects. Given the characteristics of this new semiconductor ZnSnN2, which composed of earth-abundant, non-toxic and inexpensive element, as well as a high absorption coefficient, it can be considered as an alternative for PV and optoelectronic applications.