Temperature Effect on ZnGeN2/GaN Multiwell Quantum Solar Cells

In this paper, we are interested in simulations and modeling of ZnGeN2/GaN quantum wells solar cell, like all other solar cells as we know always are sensitive to the temperature, many effects like number of quantum wells (NQWs), temperature (T) on photovoltaic properties such as current density-voltage I(V), power density-voltage P(V) and the external quantum efficiency (EQE) are investigated. The most parameter affected by the change in temperature is the open circuit voltage (V oc ). We found in a temperature of 280 K gives better results of open circuit voltage (V oc ), maximum power output (P m ), and conversion efficiency (η) their values are 2.87 V, 21.12 mW/cm 2 , and 21.22% respectively.