Implementing Binarized Neural Networks with Magnetoresistive RAM without Error Correction

no code implementations • 12 Aug 2019 • Tifenn Hirtzlin, Bogdan Penkovsky, Jacques-Olivier Klein, Nicolas Locatelli, Adrien F. Vincent, Marc Bocquet, Jean-Michel Portal, Damien Querlioz

One of the most exciting applications of Spin Torque Magnetoresistive Random Access Memory (ST-MRAM) is the in-memory implementation of deep neural networks, which could allow improving the energy efficiency of Artificial Intelligence by orders of magnitude with regards to its implementation on computers and graphics cards.

Exploiting the Short-term to Long-term Plasticity Transition in Memristive Nanodevice Learning Architectures

no code implementations • 27 Jun 2016 • Christopher H. Bennett, Selina La Barbera, Adrien F. Vincent, Fabien Alibart, Damien Querlioz

This approach outperforms a conventional ELM-inspired system when the first layer is imprinted before training and testing, and especially so when variability in device timing evolution is considered: variability is therefore transformed from an issue to a feature.

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