Deep Learning Algorithm for Advanced Level-3 Inverse-Modeling of Silicon-Carbide Power MOSFET Devices

no code implementations • 16 Oct 2023 • Massimo Orazio Spata, Sebastiano Battiato, Alessandro Ortis, Francesco Rundo, Michele Calabretta, Carmelo Pino, Angelo Messina

Channel length of power MOSFET is a key parameter involved in the static and dynamic behaviour of the device.

Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations

no code implementations • 16 Dec 2020 • Patrick Fiorenza, Corrado Bongiorno, Filippo Giannazzo, Santi Alessandrino, Angelo Messina, Mario Saggio, Fabrizio Roccaforte

In this paper, SiO2 layers deposited on 4H-SiC and subjected to different post deposition annealing (PDA) in NO and N2O were studied to identify the key factors influencing the channel mobility and threshold voltage stability in 4H-SiC MOSFETs.

Band Gap Materials Science

A Conjoint Application of Data Mining Techniques for Analysis of Global Terrorist Attacks -- Prevention and Prediction for Combating Terrorism

no code implementations • 19 Jan 2019 • Vivek Kumar, Manuel Mazzara, Maj. Gen., Angelo Messina, Jooyoung Lee

Terrorism has become one of the most tedious problems to deal with and a prominent threat to mankind.