no code implementations • 3 Jun 2008 • H. W. Liu, T. Fujisawa, H. Inokawa, Y. Ono, A. Fujiwara, Y. Hirayama
We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer.
Mesoscale and Nanoscale Physics
