no code implementations • 1 Jul 2020 • M. Hakl, Q. Y. Lin, S. Lepillet, M. Billet, J-F. Lampin, S. Pirotta, R. Colombelli, W. J. Wan, J. C. Cao, H. Li, E. Peytavit, S. Barbieri
III-V semiconductor mid-infrared photodetectors based on intersubband transitions hold a great potential for ultra-high-speed operation up to several hundreds of GHz.
Applied Physics Instrumentation and Detectors Optics
