no code implementations • 11 Apr 2020 • Cheng Wang, Kang Wei, Lingjun Kong, Long Shi, Zhen Mei, Jun Li, Kui Cai
The error correcting performance of multi-level-cell (MLC) NAND flash memory is closely related to the block length of error correcting codes (ECCs) and log-likelihood-ratios (LLRs) of the read-voltage thresholds.
