no code implementations • 2 Feb 2021 • Simona Achilli, Nguyen H. Le, Guido Fratesi, Nicola Manini, Giovanni Onida, Marco Turchetti, Giorgio Ferrari, Takahiro Shinada, Takashi Tanii, Enrico Prati
The combination of our model with the single-ion implantation method enables future research for the engineering of GeV complexes towards the creation of spatially controllable individual defects in silicon for applications in quantum information technologies.
Materials Science
