no code implementations • 25 May 2023 • Joao Henrique Quintino Palhares, Yann Beilliard, Jury Sandrini, Franck Arnaud, Kevin Garello, Guillaume Prenat, Lorena Anghel, Fabien Alibart, Dominique Drouin, Philippe Galy
In this work we report a study and a co-design methodology of an analog SNN crossbar output circuit designed in a 28nm FD-SOI technology node that comprises a tunable current attenuator and a leak-integrate and fire neurons that would enable the integration of emerging non-volatile memories (eNVMs) for synaptic arrays based on various technologies including phase change (PCRAM), oxide-based (OxRAM), spin transfer and spin orbit torque magnetic memories (STT, SOT-MRAM).
