no code implementations • 23 Jan 2024 • Soyed Tuhin Ahmed, Kamal Danouchi, Guillaume Prenat, Lorena Anghel, Mehdi B. Tahoori
Bayesian Neural Networks (BayNNs) naturally provide uncertainty in their predictions, making them a suitable choice in safety-critical applications.
no code implementations • 11 Jan 2024 • Soyed Tuhin Ahmed, Kamal Danouchi, Guillaume Prenat, Lorena Anghel, Mehdi B. Tahoori
Internet of Things (IoT) and smart wearable devices for personalized healthcare will require storing and computing ever-increasing amounts of data.
no code implementations • 9 Jan 2024 • Soyed Tuhin Ahmed, Michael Hefenbrock, Guillaume Prenat, Lorena Anghel, Mehdi B. Tahoori
Bayesian Neural Networks (BayNNs) can inherently estimate predictive uncertainty, facilitating informed decision-making.
no code implementations • 27 Nov 2023 • Soyed Tuhin Ahmed, Kamal Danouchi, Michael Hefenbrock, Guillaume Prenat, Lorena Anghel, Mehdi B. Tahoori
In this paper, we propose the Scale Dropout, a novel regularization technique for Binary Neural Networks (BNNs), and Monte Carlo-Scale Dropout (MC-Scale Dropout)-based BayNNs for efficient uncertainty estimation.
no code implementations • 16 Jun 2023 • Soyed Tuhin Ahmed, Kamal Danouchi, Michael Hefenbrock, Guillaume Prenat, Lorena Anghel, Mehdi B. Tahoori
Furthermore, the number of dropout modules per network layer is reduced by a factor of $9\times$ and energy consumption by a factor of $94. 11\times$, while still achieving comparable predictive performance and uncertainty estimates compared to related works.
no code implementations • 25 May 2023 • Joao Henrique Quintino Palhares, Yann Beilliard, Jury Sandrini, Franck Arnaud, Kevin Garello, Guillaume Prenat, Lorena Anghel, Fabien Alibart, Dominique Drouin, Philippe Galy
In this work we report a study and a co-design methodology of an analog SNN crossbar output circuit designed in a 28nm FD-SOI technology node that comprises a tunable current attenuator and a leak-integrate and fire neurons that would enable the integration of emerging non-volatile memories (eNVMs) for synaptic arrays based on various technologies including phase change (PCRAM), oxide-based (OxRAM), spin transfer and spin orbit torque magnetic memories (STT, SOT-MRAM).