no code implementations • 4 Dec 2020 • Chia-Sheng Hsu, Sou-Chi Chang, Dmitri E. Nikonov, Ian A. Young, Azad Naeemi
By introducing the dielectric (DE) leakage and interfacial trapped charges, our simulations of the hysteresis loops are in a strong agreement with the experimental measurements, suggesting the existence of an interfacial oxide layer at the FE-metal interface in metal-ferroelectric-metal (MFM) capacitors.
Applied Physics
