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C-Band Lithium Niobate on Silicon Carbide SAW Resonator with Figure-of-Merit of 124 at 6.5 GHz
In this work, we demonstrate a C-band shear-horizontal surface acoustic wave (SH-SAW) resonator with high electromechanical coupling (keff2) of 22% and a quality factor (Q) of 565 based on a thin-film lithium niobate (LN) on silicon carbide (SiC) platform, featuring an excellent figure-of-merit (FoM = keff2*Q ) of 124 at 6. 5 GHz, the highest FoM reported in this frequency range.
Thin-film Lithium Niobate on Insulator Surface Acoustic Wave Devices for 6G Centimeter Bands
The optimized LNOI SH-SAW with a {\lambda} of 400 nm exhibits a fs of 9. 05 GHz, a keff2 of 15%, Qmax of 213 and a FoM of 32, which indicates a successful implementation for device targeting centimeter bands.
Millimeter Wave Thin-Film Bulk Acoustic Resonator in Sputtered Scandium Aluminum Nitride Using Platinum Electrodes
This work describes sputtered scandium aluminum nitride (ScAlN) thin-film bulk acoustic resonators (FBAR) at millimeter wave (mmWave) with high quality factor (Q) using platinum (Pt) electrodes.
Transferred Thin Film Lithium Niobate as Millimeter Wave Acoustic Filter Platforms
This paper reports the first high-performance acoustic filters toward millimeter wave (mmWave) bands using transferred single-crystal thin film lithium niobate (LiNbO3).
38.7 GHz Thin Film Lithium Niobate Acoustic Filter
In this work, a 38. 7 GHz acoustic wave ladder filter exhibiting insertion loss (IL) of 5. 63 dB and 3-dB fractional bandwidth (FBW) of 17. 6% is demonstrated, pushing the frequency limits of thin-film piezoelectric acoustic filter technology.
Millimeter Wave Thin-Film Bulk Acoustic Resonator in Sputtered Scandium Aluminum Nitride
This work reports a millimeter wave (mmWave) thin-film bulk acoustic resonator (FBAR) in sputtered scandium aluminum nitride (ScAlN).
Thin-Film Lithium Niobate Acoustic Resonator with High Q of 237 and k2 of 5.1% at 50.74 GHz
This work reports a 50. 74 GHz lithium niobate (LiNbO3) acoustic resonator with a high quality factor (Q) of 237 and an electromechanical coupling (k2) of 5. 17% resulting in a figure of merit (FoM, Q x k2) of 12. 2.
Thin-Film Lithium Niobate Acoustic Filter at 23.5 GHz with 2.38 dB IL and 18.2% FBW
This work reports an acoustic filter at 23. 5 GHz with a low insertion loss (IL) of 2. 38 dB and a 3-dB fractional bandwidth (FBW) of 18. 2%, significantly surpassing the state-of-the-art.
